Consisting of gold-metalized pre-matched GaN on Silicon Carbide transistor, MAGX-001214-500L00 provides 500 W of output power with 19 dB of gain, 55% efficiency, and 300 µs pulse. High breakdown voltages allow for operation at 50 V under extreme load mismatch conditions. Operating in frequency range of 1,200–1,400 MHz, HEMT transistor is available in both flanged and flangeless packages.
This story is related to the following:Gallium Nitride (GaN) Transistors | Power Transistors