Home › RFMD Introduces World's First 6-Inch GaN-On-SiC Wafers For RF Power Transistors
 

Keywords :   


RFMD Introduces World's First 6-Inch GaN-On-SiC Wafers For RF Power Transistors

2013-09-20 06:26:37| rfglobalnet Home Page

RFMD (Nasdaq: RFMD), a global leader in the design and manufacture of high-performance radio frequency solutions, today introduced the world's first 6-inch GaN-on-Silicon Carbide (SiC) wafers for manufacturing RF power transistors for both military and commercial use.

Tags: power worlds introduces transistors

Category:Telecommunications

Latest from this category

All news
30.04Driving Innovation into Todays Automotive Market: Powering Stronger Customer Experiences
23.04Google Cloud Next 24 Highlights
22.04HIMSS 24 Healthcare IT Conference Hot Topics from AI to Partner Alliances
Telecommunications »
05.05ELF Beauty Teams with Billie Jean King to Change the Board Game to Support Inclusivity
05.05Target Faces Lawsuit Over Sunscreen Coral Bleaching Claims
05.05Goops Latest Launch & Hain Celestial Streamlines Portfolio
05.05The Summer of Sister Golden Hair
05.05Persil Laundry Detergent Rebrands
05.05Weekly Recap: Carefree Adds Pads to Lineup, Soft N Dry Secures Private Label Sales Network ...
05.05How Brexit is not 'done' for Northern Ireland
05.05Is Zimbabwe zigzagging into further currency chaos?
More »