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RFMD(R) Introduces World's First 6-Inch GaN-on-SiC Wafers for RF Power Transistors

2013-09-19 06:00:00| Industrial Newsroom - All News for Today

Company Converting All Gallium Nitride (GaN) Processes to High-Volume 6-Inch Wafer Fabrication to Reduce Platform Cost, Address Growth Opportunities<br /> <br /> GREENSBORO, N.C. -- RFMD (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency solutions, today introduced the world's first 6-inch GaN-on-Silicon Carbide (SiC) wafers for manufacturing RF power transistors for both military and commercial use. The company is converting all GaN production and ...This story is related to the following:Wafers |

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