Respectively offering offer 8 and 4 Mb memory, SST26WF080B and SST26WF040B operate from 1.8 V, offer 100 years data retention, and exhibit endurance of 100,000+ erase/write cycles. Sector and block erase commands are completed in 18 msec, and full chip erase operation is completed in 35 msec. Other features include SQI interface (104 MHz quad I/O serial interface), 10 µA typ draw in standby (1.8 µA typ in deep power-down mode), and active read current of 15 mA typ at 104 MHz.