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Silicon-Germanium Chip Sets New Speed Record
2014-02-19 09:24:16| rfglobalnet News Articles
A research collaboration consisting of IHP-Innovations for High Performance Microelectronics in Germany and the Georgia Institute of Technology has demonstrated the world's fastest silicon-based device to date. The investigators operated a silicon-germanium (SiGe) transistor at 798 gigahertz (GHz) fMAX, exceeding the previous speed record for silicon-germanium chips by about 200 GHz.
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Category:Telecommunications
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