Incorporating single wafer LINAC technology, Purion XE ion implanter enables high-yield manufacture of sub-16 nm planar and 3D devices. System incorporates 500+ wafers/hr end station and advanced filtration systems. Latter optimize beam purity, while angle control system and constant focal length scanning deliver precise and repeatable dopant placement. Scanned spot beam architecture enables control of damage engineering as well as other advanced processes.
This story is related to the following:Laboratory and Research Supplies and EquipmentIon Implantation Systems | Ion Implanters | High Voltage Accelerators | Linear Accelerators