Operating over 1,700 MHz bandwidth centered at 8.5 GHz, GaN-based Model DM-X100-01 delivers 100 W peak pulsed power output. Core microwave assembly consists of chip-and-wire design in slim, low-profile housing. Flexible in layout and architecture, X-band amplifier is fully customizable to meet individual specifications for electrical, mechanical, and environmental parameters. Device is suited for demanding defense, aerospace, and communications applications.