Home Technology Overview: 25W X-Band GaN PA MMIC Design
 

Keywords :   


Technology Overview: 25W X-Band GaN PA MMIC Design

2014-10-24 13:29:23| rfglobalnet Home Page

Gallium Nitride (GaN) MMIC processes suitable for operation at microwave frequencies are now commercially available from a number of vendors worldwide. The high breakdown voltage of GaN transistors and their ability to operate reliably at high junction temperatures make them well suited for the realization of high-power amplifiers. This case study describes the design and performance of a 25W X-band GaN PA MMIC developed with a 0.25µm GaN on SiC process.

Tags: design technology overview gan

Category:Telecommunications

Latest from this category

All news

»
06.11Hurricane Rafael Update Statement
06.11Summary for Hurricane Rafael (AT3/AL182024)
06.11Warning millions will struggle to pay water bill rises
06.11Atlantic Tropical Weather Outlook
06.11Tropical Storm Rafael Graphics
06.11Tropical Storm Rafael Public Advisory Number 9A
06.11Summary for Tropical Storm Rafael (AT3/AL182024)
06.11Eastern North Pacific Tropical Weather Outlook
More »