Home › Toshiba Adds High Gain 200W GaN HEMT Power Amplifier For C-Band Radar Applications
 

Keywords :   


Toshiba Adds High Gain 200W GaN HEMT Power Amplifier For C-Band Radar Applications

2013-06-07 10:20:04| rfglobalnet News Articles

Toshiba America Electronic Components, Inc. (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, and its parent company, Toshiba Corp., recently announced the addition of a 200W C-Band gallium nitride (GaN) semiconductor High Electron Mobility Transistor (HEMT) to its power amplifier product family.

Tags: high power applications gain

Category:Telecommunications

Latest from this category

All news
30.04Driving Innovation into Todays Automotive Market: Powering Stronger Customer Experiences
Telecommunications »
09.05Scalstrm and EZDRM partner on video content security
09.05Appvion launches EarthChem sustainable direct thermal portfolio
09.05Glatfelter Reports Financial Results
09.05Maryland Adopts PaintCare Program
09.05Society of Cosmetic Chemists Intermountain West to Host Healthy Bite Oral Care Symposium
09.05A.Celli and Akinal Tekstil Collaborate on Line Installation
09.05Record levels of shoplifting show signs of falling
09.05National Advertising Division Recommends Amyris Clean Beauty Modify Claim
More »