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Tag: photodiode
Single Active Area Photodiode permits detection to 1 nm.
2014-01-10 14:30:44| Industrial Newsroom - All News for Today
Offering stable response after exposure to EUV/UV conditions, SXUV100 features 100 mm² active area. Sensitive device is operational from 1–1,000 nm, with peak photon responsivity at 0.27 A/W (at 1 nm) and 0.33 A/W (at 850 nm). Other characteristics include 10 MΩ shunt resistance @ ±10 mV, 6 nF typ capacitance, and 250 nsec typ response time. Optimal applications include detection of 13.5 nm wavelengths or any high-power density source monitoring from 1–150 nm. This story is related to the following:Optics and PhotonicsSearch for suppliers of:
Quadrant Photodiode offers 5 mm² active area in each quadrant.
2013-11-22 14:28:47| Industrial Newsroom - All News for Today
Housed in TO-5 windowless package with 5-pin header, Model SXUVPS4C features light responsivity from 1–1,000 nm and shunt resistance of 100 MΩ, making it suitable for 2 axes-positional-centering applications for lasers in 13.5–200 nm wavelength range. Operating and storage temperatures range from -10 to 40°C ambient and from -20 to 80°C in nitrogen or vacuum conditions. Max junction temperature is 70°C and lead-soldering temperature is 260°C at 0.080 in. from case for 10 sec. This story is related to the following:Optics and Photonics Sponsored by: OFS Specialty Photonics Div - OFS Cat Sponsor for Vert Banner replacementSearch for suppliers of:
Tags: area
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active
quadrant
Radiation-Hard Photodiode is suited for electron detection.
2013-10-10 14:34:13| Industrial Newsroom - All News for Today
With circular active area, 20 mm² UVG20C offers 100% internal quantum efficiency. Absence of surface dead region results in 100% collection efficiency. Radiation-hard, junction-passivating, oxynitride protective entrance window makes device stable even after exposure to flux of UV photons; responsivity degradation is <2% after MJ/cm² of 254 nm and tens of kilojoules/cm² of 193 nm photon exposure. Typ values include 1.7 µsec rise time, 200 MΩ shunt resistance, and 4 nF capacitance. This story is related to the following:Optics and Photonics Sponsored by: OFS Specialty Photonics Div - OFS Cat Sponsor for Vert Banner replacementSearch for suppliers of:
Tags: detection
electron
suited
photodiode
Quadrant PIN Photodiode: QP154-Q
2013-10-04 15:33:00| autocentral Products
First Sensor AG is now offering NEW high performance photodetectors for the next generation of SALS (Semi-Active-Laser-Seeker)! We have combined the highest sensitivity, high speed, low noise and low crosstalk into our new range of heated, N-Type quadrant detectors. The integrated heater and temperature sensor allows the detector temperature to be maintained at the optimum level for 1064nm pulsed laser detection. The first standard part is a 14mm diameter detector and others are scheduled to follow. Full customization of both package and detector is possible for your specific application. We believe that these new heated photodetectors offer the best performance available in the market today
Tags: pin
quadrant
photodiode
Absolute Photodiode features 100 mm² active area.
2013-09-19 14:31:47| Industrial Newsroom - All News for Today
Delivering 100% internal quantum efficiency, Model UVG100 is suited for applications that require extreme stability for detection of vacuum UV and extreme UV photons. Oxynitride front window ensures successful operation without performance degradation that occurs with high humidity. Under test conditions at 254 nm, responsivity is 0.08 min, 0.09 typ, and 0.13 max A/W. Additional specifications include max rise time of 10 µs at 10 V and minimum shunt resistance of 20 MΩ at ±10 V. This story is related to the following:Optics and Photonics Sponsored by: OFS Specialty Photonics Div - OFS Cat Sponsor for Vert Banner replacementSearch for suppliers of:
Tags: area
features
active
absolute