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Tag: photodiode
Multi-Element Photodiode suits electron detection, bolometry.
2013-07-18 14:30:16| Industrial Newsroom - All News for Today
Supplied in 22-pin, dual in-line package with 100% internal quantum efficiency, 20-element AXUV20ELG is suited for measurement of minute amounts of radiant energy. It can also be used for electron detection, providing EUV-UV and UV-VIS-NIR photon responsivity measured in amperes per watt. Along with 0.75 x 4.1 mm active area and 3 mm² sensitive area per element, features include 25 V typ reverse breakdown voltage, 40 pF max capacitance, 200 nsec rise time, and 100 MΩ min shunt resistance. This story is related to the following:Optics and PhotonicsSearch for suppliers of:
Tags: detection
electron
suits
photodiode
Sixteen-Element Photodiode suits UV/EUV or electron detection.
2013-05-21 14:33:50| Industrial Newsroom - All News for Today
Supplied in 40-pin dual in-line package, AXUV16ELG has 2 x 5 mm active area, sensitive area of 10 mm² per element, and internal quantum efficiency (QE) rated at 100%. This 16-element photodiode, offering stable response after exposure to high energy electrons or photons, features reverse breakdown voltage at 25 V typ, capacitance of 40 pF, and rise time of 500 nsec. Storage and operating range is -10 to +40°C for ambient environments (-20 to +80°C for nitrogen or vacuum conditions). This story is related to the following:Optics and PhotonicsSearch for suppliers of:
Tags: detection
electron
suits
photodiode
IR Emitters and Photodiode are suited for IR touch panels.
2013-05-15 14:30:34| Industrial Newsroom - All News for Today
IR emitters VSMG10850 (850 nm) and VSMB10940 (940 nm) and package-matched, high-speed silicon PIN photodiode VEMD10940F, with radiant sensitivity from 780–1,050 nm, offer ±75° angle of half intensity in 3 x 2 x 1 mm side-view SMT package. Offered in clear, untinted plastic packages, IR emitters provide radiant intensity of 1 mW/sr typ @ 20 mA and switching times of 15 nsec. Featuring daylight blocking filter, VEMD10940F offers reverse light current of 3 µA and dark current of 1 nA. This story is related to the following:Optics and PhotonicsSearch for suppliers of: Photodiodes
Another First for Oclaro: High Power Laser Diode with Internal Monitor Photodiode at 637nm
2013-04-24 06:00:00| Industrial Newsroom - All News for Today
Oclaro 120mW laser diode offers precise control for industrial applications, available now from the Optoelectronics Company.<br /> <br /> Oclaro's HL63142DG high power red laser diode is the first ever high power laser diode to offer an inbuilt monitor photodiode at a lasing wavelength of 637nm. It is a unique design which enables system designers to control optical power output by monitoring the photodiode current and adjusting power variants and temperature for precise control and constant ...This story is related to the following:High Power Diodes |
Tags: high
power
internal
monitor
InGaAs Photodiode Array NIR Spectrometers: LF-Series Datasheet
2013-03-07 10:25:49| dairynetwork Home Page
This datasheet includes a detailed description of Spectral Evolution’s LF Series of InGaAs Photodiode Array NIR Spectrometers. These spectrometers feature an-all photodiode array optical system, meaning they have no moving optical parts.
Tags: array
datasheet
nir
spectrometers