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Power Amplifier supports military/commercial applications.

2013-06-11 14:30:16| Industrial Newsroom - All News for Today

Consisting of 0.2 mm GaN HEMT MMIC power amplifier chip in flange mount package, Model APN180FP operates from 27–31 GHz with drain voltage of +28 V. Unit provides 21 dB of linear gain, +37 dBm of output power at 1 dB gain compression, and +39 dBm in saturation with Power Added Efficiency of 26% at midband. For less demanding applications, device can be operated from drain voltage as low as +20 V while still producing +37 dBm of saturated output power. This story is related to the following:Electronic Components and DevicesSearch for suppliers of: Microwave Monolithic Integrated Circuit (MMIC) Amplifiers |

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RF Power Amplifier is suited for 3G/4G small-cell base stations.

2013-06-10 14:29:37| Industrial Newsroom - All News for Today

Operating in 2,100–2,170 MHz frequency band, ASC7517 delivers 1.4 W of power using 2.85 and 5 V supply while operating with power efficiency of 28%. Multistage PA, used in predistortion system, uses Doherty architecture and supports ACLR requirements of WCDMA, HSPA, and LTE systems without compromising efficiency. Product also provides 42 dB of RF gain, eliminating need for driver amplifiers. Supplied in 8 x 14 x 1.3 mm SMT package, PA integrates RF matching and power combining circuit. This story is related to the following:RF Amplifiers |

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Toshiba Adds High Gain 200W GaN HEMT Power Amplifier For C-Band Radar Applications

2013-06-07 10:20:04| rfglobalnet News Articles

Toshiba America Electronic Components, Inc. (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, and its parent company, Toshiba Corp., recently announced the addition of a 200W C-Band gallium nitride (GaN) semiconductor High Electron Mobility Transistor (HEMT) to its power amplifier product family.

Tags: high power applications gain

 

Northrop Grumman Begins Sampling New Gallium Nitride Packaged Power Amplifier For Military, Commercial High-Power Amplifier Needs

2013-06-07 02:47:43| rfglobalnet Home Page

Northrop Grumman Corporation (NYSE:NOC) has developed a new gallium nitride (GaN) flange packaged power amplifier, APN180FP, targeting military and commercial Ka-band communication applications.

Tags: power needs commercial military

 

Northrop Grumman Begins Sampling New Gallium Nitride Packaged Power Amplifier For Military, Commercial High-Power Amplifier Needs

2013-06-07 02:47:43| wirelessdesignonline News Articles

Northrop Grumman Corporation (NYSE:NOC) has developed a new gallium nitride (GaN) flange packaged power amplifier, APN180FP, targeting military and commercial Ka-band communication applications.

Tags: power needs commercial military

 

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