je.st
news
Tag: ghz
Microwave/RF Assemblies suit 32 GHz spaceflight applications.
2013-09-30 14:30:13| Industrial Newsroom - All News for Today
Intended for Ka-band uplink and downlink satellite applications, Type 5G Series of GORE® Spaceflight Microwave/RF Assemblies provides optimized shielding effectiveness and reliable signal integrity. Units can be terminated with either 2.92 mm straight-pin connectors or 2.92 mm right-angle pin connectors. Low-profile assemblies have been qualified for spaceflight applications in 3 separate phases: integration, launch, and in-orbit. This story is related to the following:Communication Systems and EquipmentSearch for suppliers of: RF Cable Assemblies |
Tags: applications
suit
ghz
assemblies
1.710-1.785 GHz Variable Gain Amplifier: SKY65373
2013-09-30 13:16:04| rfglobalnet Downloads
The SKY65373 is a low noise, variable gain amplifier ideal for LTE and WCDMA infrastructure applications, as well as low noise, high linearity systems.
Tags: gain
variable
ghz
amplifier
1.710-1.785 GHz Variable Gain Amplifier: SKY65373
2013-09-30 13:16:04| wirelessdesignonline Downloads
The SKY65373 is a low noise, variable gain amplifier ideal for LTE and WCDMA infrastructure applications, as well as low noise, high linearity systems.
Tags: gain
variable
ghz
amplifier
Efficient Power Conversion (EPC) Blurs The Line Between Power And RF Transistors With Family Of Gallium Nitride Transistors Capable Of Amplification Into The Multiple GHz Range
2013-09-27 08:27:53| rfglobalnet News Articles
Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs extends its family of high-speed, high performance transistors with the EPC8000 family of products.
Efficient Power Conversion (EPC) Blurs The Line Between Power And RF Transistors With Family Of Gallium Nitride Transistors Capable Of Amplification Into The Multiple GHz Range
2013-09-27 08:27:53| wirelessdesignonline News Articles
Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs extends its family of high-speed, high performance transistors with the EPC8000 family of products.
Sites : [150] [151] [152] [153] [154] [155] [156] [157] [158] [159] [160] [161] [162] [163] [164] [165] [166] [167] [168] [169] next »