je.st
news
Tag: optimized
Scientific Lasers are optimized for stability and quality.
2013-01-30 14:31:57| Industrial Newsroom - All News for Today
Pumped with Millennia® eV™, Matisse® tunable, single-frequency laser offers over 6.5 W of output, 60 kHz external linewidth, and near diffraction-limited TEM00 beam quality. Also available, Solstice® single-box ultrafast amplifier produces less than 50 fs pulses in kHz repetition rate regime and doubles peak power at greater than 70 GW. XP cavity provides optimal beam quality for driving optical parameter amplifier (OPA) systems with M2 less than 1.3. This story is related to the following:Electronic Components and DevicesSearch for suppliers of: Diode-Pumped Lasers |
Tags: quality
scientific
stability
optimized
Aruba Networks Introduces First Wireless LAN Platform Optimized for Mobile Application Delivery
2013-01-16 13:27:10| Wireless - Topix.net
New Aruba 7200 Series Mobility Controllers with Aruba AppRF Technology Address Next Wave of BYOD with 11x Faster Application Performance at 1/2 the Cost-- Aruba Networks Inc announced a new wireless LAN platform that addresses the explosion of mobile applications and devices challenging enterprise networks, while dramatically reducing enterprise IT ... (more)
Tags: mobile
application
delivery
networks
Oxea to increase production capacities in Bishop, Texas, with optimized processes
2013-01-15 12:00:00| chemicalonline News Articles
The chemical company Oxea has developed several innovative continuous processes to expand its production at its site in Bishop, Texas, USA. The optimizations will add significant further volume, beyond the already announced capacity increases for Potassium Formate and Trimethylolpropane
Tags: increase
production
texas
processes
N-Channel Power MOSFET (100 V) offer optimized on-resistance.
2013-01-08 14:30:25| Industrial Newsroom - All News for Today
Respectively, SiB456DK and SiA416DJ TrenchFET® power MOSFETs come in thermally enhanced PowerPAK® SC-75 1.6 x 1.6 mm and PowerPAK SC-70 2 x 2 mm packages and offer on-resistance of less than 200 and 100 mΩ. Respective on-resistance times gate charge values for SiA416DJ are 540 mΩ-nC at 10 V and 455 mΩ-nC at 4.5 V, while values for SiB456DK are 611 mΩ-nC at 10 V and 558 mΩ-nC at 4.5 V. MOSFETs are optimized for boost converters, low-power DC/AC inverters, and primary side switching. This story is related to the following:MOSFETs
Tags: power
offer
optimized
mosfet
Sites : [50] [51] [52] [53] [54] [55] [56] [57] [58] [59] [60]