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Normally-Off 100V GaN Transistors come in low-inductance package.
2014-05-30 14:31:06| Industrial Newsroom - All News for Today
Respectively, normally off 100 V GaN transistors GS61002P, GS61004P, GS61006P, and GS61008P are 20 A/21 mΩ, 40 A/11 mΩ, 60 A/8 mΩ, and 80 A/5 mΩ parts. Half bridge device, GS71008P (80 A/5 mΩ), is also available. Enhancement mode parts feature reverse current capability, source-sense for optimal high speed design, and minimal Total Gate Charge and Reverse Recovery Charge. RoHS-compliant, near chipscale, embedded GaNPX package minimizes inductance and optimizes thermal performance. This story is related to the following:Gallium Nitride (GaN) Transistors |
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gan
transistors
100v
Power Supply Units offer high power in compact, 1U package.
2014-05-29 14:31:33| Industrial Newsroom - All News for Today
Able to achieve 92% efficiency, XSolo series includes convection-cooled, 504 W open-frame U-channel form-factor model (6.8 W/cu.in.) and enclosed, fan-cooled chassis model that delivers up to 1,008 W (13.6 W/cu.in.). Max dimensions are 40 x 238 x 128 mm, and safety certifications of these MIL-810 and SEMI F47 compliant, 1U, single-output switching PSUs include EN60950 and EN60601-1. Standard features include variable fan speed, 12 V/300 mA isolated bias supply, and remote ON/OFF. This story is related to the following:Electrical Equipment and Systems Sponsored by: Globtek Inc. - MOBILE BANNER ADSearch for suppliers of: Military Power Supplies | Power Supplies
Low Power, Longer Distance, Tiny Package: New Laser Sensing Technology for Self-driving Cars, ...
2014-05-29 06:00:00| Industrial Newsroom - All News for Today
Able to remotely sense objects across distances as long as 30 ft, 3D imaging technology developed by researchers at University of California, Berkeley, could (with further development) be used to make smaller, inexpensive 3D imaging systems that offer maximized range for such potential uses as self-driving cars, smartphones, and interactive video games without requiring bulky boxes of electronics or optics. UC Berkeley's Behnam Behroozpour will present this work at CLEO: 2014 on June 11. This story is related to the following:Trade Associations
Tags: power
low
technology
cars
IGBT and Rectifier Diode Modules come in diverse package designs.
2014-05-23 14:31:21| Industrial Newsroom - All News for Today
Intended for power control applications, Half-Bridge Circuit IGBT Modules come in S, D, or WD packages with ratings up to 1,200 V and 600 A. Minimized loss promotes efficiency and switching speed, while short circuit capability reduces protection requirements. With ratings up to 1,800 V and 200 A, Phase Leg and Common Cathode Circuit Rectifier Diode Modules come in S and A packages. Reverse recovery loss promotes operational efficiency, and forward voltage allows for reduced heat dissipation. This story is related to the following:Green & CleanHigh Voltage Diodes | High Power Diodes | Diode Modules | Switching, High Power Modules | Power Modules
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diverse
modules
designs
Bourns Expands Comprehensive High Power TVS Diode Product Line With New High Current Bidirectional TVS Diode In SMD Package
2014-05-22 07:55:11| rfglobalnet Home Page
Bourns, Inc., a leading manufacturer and supplier of electronic components, recently further expanded its comprehensive line of high power TVS (PTVS) diodes with a new high current bidirectional TVS diode offered in an SMD package.
Tags: high
line
product
current
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