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TÜV Nord scores Kia Soul EV as emitting 39.7% fewer whole life GHGs than diesel counterpart
2014-06-18 12:30:32| Green Car Congress
Future Electronics Offers Availability of Vishay's High Speed Infrared Emitting Diode VSLB9530S
2013-11-26 06:00:00| Industrial Newsroom - All News for Today
Montreal, Quebec - Future Electronics, a global leading distributor of electronic components, has offers availability of high speed infrared emitting diode VSLB9530S from Vishay.<br /> <br /> VSLB9530S is an infrared, 940 nm emitting diode in GaAlAs multi-quantum well (MQW) technology with high radiant power and high speed. It is molded in a clear high power TELUX package with an oval lens resulting in angle of half intensities in vertical direction of ± 18° and in horizontal direction of ± ...This story is related to the following:Vision SystemsSearch for suppliers of:
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IR Emitting Diodes feature ±9° angles of half intensity.
2013-11-12 14:30:51| Industrial Newsroom - All News for Today
Based on GaAIAs surface emitter chip technology, Model VSMY14940 offers radiant intensity to 82 mW/sr at 70 mA drive current, switching time of 10 ns, and forward voltage of 1.48 V. In applications where lower intensity is needed, Model VSMB14940 is built on GaAIAs multi-quantum well technology for radiant intensity of 35 mW/sr, switching time of 15 ns, and forward voltage of 1.33 V. Housed in 3.2 x 2.51 x 1.2 mm clear SMD side-view packages, 940 nm devices are RoHS-compliant and halogen-free. This story is related to the following:Vision SystemsSearch for suppliers of: Infrared Diodes
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Intel has been emitting fluoride for years without state knowledge, permit
2013-09-13 02:59:46| Waste Management - Topix.net
Though Intel has been emitting fluoride since 1978, the company is only now adding the pollutant to an air quality permit for its Washington County-based operations.
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Infrared Emitting Diodes offer wide-dome lenses.
2013-04-09 14:39:26| Industrial Newsroom - All News for Today
With 850, 890, and 940 nm wavelengths, VSMY2853, VSMF2893, VSMB2943, and VSMB2948 Series provide ±25° and ±28° angles of half intensity and optical power from 20–35 mW/sr at 100 mA drive current. Units feature GaAIAs surface emitter chip (VSMY2853), double hetero (VSMF2893), and multi quantum well (VSMB2943, VSMB2948) technologies. Supplied in 2.3 x 2.3 x 2.5 mm gullwing and reverse gullwing packages as well as 2.3 x 2.55 x 2.3 mm side-view packages, emitters offer switching speeds down to 10 ns. This story is related to the following:Vision SystemsSearch for suppliers of: Diodes | Infrared Light Emitting Diodes | Optical Lenses
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