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Power Integrations SCALE-iDriver for SiC MOSFETs achieves AEC-Q100 automotive qualification

2020-03-23 09:55:36| Green Car Congress

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Toshiba launches 100V N-channel power MOSFETs in Compact package for 48V automotive applications

2019-12-26 11:55:44| Green Car Congress

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Surface Mount Power MOSFETs feature Kelvin connections.

2015-10-09 14:31:09| Industrial Newsroom - All News for Today

Supplied in surface mount PowerPAK® 8 x 8 package, 600 V Models SiHH26N60E, SiHH21N60E, SiHH14N60E, and SiHH11N60E feature large drain terminal for low thermal resistance and Kelvin source connection that can increase efficiency by optimizing gate drive signal. Devices offer low on-resistance down to 0.135 Ω at 10 V and ultra-low gate charge down to 31 nC. RoHS-compliant and halogen-free, MOSFETs are suited for telecom, server, computing, lighting, and industrial applications.

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Using Power MOSFETs In Parallel

2015-07-24 17:43:55| rfglobalnet Downloads

This application note presents and discusses some of the problems that may be experienced when multiple MOSFETs are operated in a paralleled group.

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N-Channel Power MOSFETs target automotive applications.

2015-06-16 14:31:05| Industrial Newsroom - All News for Today

Featuring chip that uses U-MOSVIII-H process in TO-220SM(W) package, Models TK160F10N1 and TK200F04N1L are 100 V/160 A and 40 V/200A MOSFETs, respectively. Devices achieve low on-resistance characteristics of RDS(ON) = 0.78 m (typical) at V(GS) = 10 V for TK200F04N1L and RDS(ON) = 2.0m (typical) at V(GS) = 10 V for TK160F10N1. With low thermal resistance of R(th(ch-c))=0.4°C/W max, both MOSFETs are suited for electric power steering, DC-DC converters, motor drivers, and load switches.

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