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GaN RF Input-Matched Transistors: TGF2965-SM Datasheet
2015-09-24 18:18:41| rfglobalnet Downloads
The TGF2965-SM is a wideband 32 V RF transistor operating in the 0.03 to 4.0 GHz frequency range. These devices have an integrated matching network that allows for wideband gain and power performance, while the output is simultaneously matched to optimize power and efficiency for any region within the band.
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gan transistors
GaN Systems Showcases High Current 650V, 100A Gallium Nitride Power Transistors for First Time at Energy Conversion Congress and Expo
2015-09-10 12:31:11| Industrial Newsroom - All News for Today
Sampling now with major solar, industrial and automotive customers worldwide; new customer applications on display OTTAWA, Ontario, GaN Systems Inc., a leading developer of gallium nitride power switching semiconductors, is displaying its GS66540C 650V 100A high current GaN power transistors for the first time at...
Qorvo's New Plastic GaN Transistors Provide Cost Effective Radar And Communications System Solutions
2015-05-21 06:44:55| rfglobalnet Home Page
Qorvo, Inc., a leading provider of RF solutions for mobile, infrastructure and aerospace/defense applications, recently announced a new family of input-matched gallium nitride (GaN) transistors in a low-cost plastic package designed to enable cost effective commercial and military radar and radio communications systems.
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Freescale Introduces Breakthrough Ultra-Wideband RF Power GaN Transistors in Advanced Plastic Packages
2015-05-18 07:00:00| Freescale Press Releases
Freescale Introduces Breakthrough Ultra-Wideband RF Power GaN Transistors in Advanced Plastic PackagesFor more information click on title.
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GaN on SiC HEMT Pulsed Power Transistors offer 650 W peak output.
2015-03-27 13:31:09| Industrial Newsroom - All News for Today
Available in standard flange or earless flange packaging, MAGX-000912-650L00 and MAGX-000912-650L0S are gallium nitride (GaN) on silicon carbide (SiC) HEMT pulsed power transistors intended for L-band pulsed avionics applications. These gold metalized, internally matched, GaN on SiC depletion mode RF power transistors operate over 960–1,215 MHz range and feature 600 year MTTF. Peak output power is 650 W with 20 dB typ gain and 62% drain efficiency.