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5W GaN Transistor From RFMW Supports 5GHz ISM

2015-03-20 02:35:57| wirelessdesignonline News Articles

RFMW, Ltd. announces design and sales support for a high efficiency, GaN, 5 watt, input-matched transistor covering the 5GHz ISM bands. The TriQuint (Qorvo) TGF3020-SM provides 5.7W P3dB at 5.4GHz.

Tags: supports gan ism transistor

 

GaAs LNA For Radar Applications From RFMW

2015-03-06 03:36:27| rfglobalnet Home Page

RFMW, Ltd. announces design and sales support for the TGA2618-SM, 16 to 18GHz Low Noise Amplifier from TriQuint (Qorvo). The TGA2618-SM offers a noise figure of 2.3dB for use in both commercial and military radar as well as satellite communication systems.

Tags: applications radar gaas lna

 
 

RFMW Ltd., And API Technologies Corp. Announce Worldwide Distribution Agreement

2015-02-20 04:12:40| rfglobalnet Home Page

RFMW Ltd. and API Technologies Corp. recently announced a worldwide distribution agreement effective February 1, 2015. API Technologies Corp. ("API") is a leading provider of high performance RF, microwave and millimeterwave solutions. RFMW Ltd. is a specialized distributor providing customers and suppliers with focused distribution of RF and microwave components as well as specialized component-engineering support.

Tags: agreement distribution technologies worldwide

 

GaN Driver Amplifier From RFMW Serves X-Band

2014-11-19 08:46:54| rfglobalnet Home Page

RFMW, Ltd. announces design and sales support for the TGA2627-SM. This 32dBm Psat GaN driver comes packaged as a 5x5mm, air-cavity ceramic QFN providing an SMT advantage over DIE based competitors.

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RFMW Launches GaN Power Doubler MMIC from TriQuint Semiconductor

2013-08-17 17:46:55| Semiconductors - Topix.net

This 24V power doubler features 24dB gain at 1GHz. P1dB is 31dBm. CATV OEM customers, subcontractors and ODMs will appreciate the benefits of GaN HEMT processes offering as much as 2dB higher gain coupled with lower power dissipation than pure GaAs devices.

Tags: power launches semiconductor gan

 

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