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View our RF Power Transistor Offering

2016-11-27 16:58:38| IC ELECTRONIC COMPONENTS

Here you can view some of the old RF and Microwave Power Transistor we can supply. Yes we still have a lot of the older Motorola, Philips, TRW and other devices

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Ampleon GaN RF Transistor Family Complements LDMOS Portfolio With High-Efficiency And Wideband Solutions For Mobile Broadband

2016-05-20 08:15:41| rfglobalnet Home Page

Ampleon recently announced its second generation of 50 Volts 0.5 um GaN on SiC RF power transistors, dedicated for mobile broadband applications.

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Broadband General Purpose GaN Transistor: IGN0160UM10 Datasheet

2016-05-19 12:58:59| rfglobalnet Home Page

The IGN0160UM10 is a broadband GaN transistor ideal for use in general purpose applications. It is an un-matched internal impedance device with depletion mode, requires a negative gate voltage and bias sequencing, and is specified for use under Class AB operation.

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Broadband General Purpose GaN Transistor: IGN0160UM10

2016-05-19 12:56:42| rfglobalnet Home Page

Integra Technologies offers the IGN0160UM10 broadband GaN transistor for use in general purpose applications. The transistor operates throughout the 0.100 through 6.00 GHz frequency range, and is designed to utilize GaN on SiC HEMT technology.

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220 Watt Asymmetric Doherty Power Transistor: QPD2730 Datasheet

2016-05-16 15:41:34| rfglobalnet Home Page

The QPD2730 is a 220 Watt asymmetric Doherty power transistor composed of pre-matched, discrete GaN on SiC HEMTs. With an operational frequency range of 2.575 to 2.635 GHz, this transistor is ideal for W-CDMA/LTE, macrocell base station, active antenna, and asymmetric Doherty applications.

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