Home › 25W, 32V, DC-12 GHz GaN RF Transistor: TGF2979-SM Datasheet
 

Keywords :   


25W, 32V, DC-12 GHz GaN RF Transistor: TGF2979-SM Datasheet

2015-12-10 09:55:36| rfglobalnet Home Page

The TGF2979-SM is a 5W discrete GaN on SiC HEMT with an operating frequency in the DC-12 GHz range, and an operating voltage of 25V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

Tags: ghz gan transistor datasheet

Category:Telecommunications

Latest from this category

All news
»
23.11PlayStationVitaPCH-2000
23.11GB
23.11 Malbon
23.11PING PEARL GATES
23.11WATCH
23.11L
23.11Tetsuya_SP2 DMC
23.116
More »