The TGF2955 is a 40W discrete GaN on SiC HEMT with an operating frequency in the DC – 12 GHz range, has a saturated output power of 46.4 dBm, and power gain of 19.2 dB at 3 GHz. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of high efficiency applications including military and civilian radar, radio communications, and test instrumentation.