Home 50V GaN HEMT for LTE: CGHV22100
 

Keywords :   


50V GaN HEMT for LTE: CGHV22100

2013-03-14 15:53:33| rfglobalnet Products

This GaN HEMT (gallium-nitride high electron mobility transistor) covers the 1.8-2.2 GHz frequency range. It features 20 dB Gain, -35 dBc ACLR (at 25 W PAVE), and 31-35% efficiency (at 25 W PAVE). A high degree of DPD (digital pre-distortion) correction can also be applied to this transistor.

Tags: gan lte 50v hemt

Category:Telecommunications

Latest from this category

All news

»
01.11Atlantic Tropical Weather Outlook
01.11Eastern North Pacific Tropical Weather Outlook
01.11Boeing makes 38% pay rise offer in bid to end strike
01.11The house paints that promise much more than colour
01.11Eastern North Pacific Tropical Weather Outlook
01.11Atlantic Tropical Weather Outlook
01.11Technology adoption: What's on the ag tech horizon for 2025
01.11Technology adoption: What's on the ag tech horizon for 2025
More »