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Tag: 50v
Richardson RFPD Introduces New 7001300 MHz, 350W CW, 50V RF Power LDMOS Transistor From NXP
2016-04-05 07:30:27| rfglobalnet Home Page
Richardson RFPD, Inc. announced recently the availability and full design support capabilities for a new LDMOS transistor from NXP Semiconductors.
Tags: power
mhz
introduces
richardson
Seiko Instruments (SII) Releases New Automotive LDO Regulator Capable Of 50V Input Voltage And 200mA Output Current
2015-11-24 06:48:47| electronicsweb Home Page
Seiko Instruments Inc. (SII) announced the release of the S-19200 Series automotive LDO regulator with high input voltage of 50V, adopting a newly developed compact package TO-252-5S (6.5 x 6.5 x t1.3 mm) with high heat dissipation
Tags: current
automotive
instruments
releases
Wolfspeed Introduces 50V Plastic GaN HEMTs For LTE & Radar
2015-10-13 06:32:02| rfglobalnet Home Page
Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has introduced two new plastic-packaged 50V/60W GaN HEMT devices that provide the intrinsic GaN value of power and bandwidth in a low cost package platform.
Tags: plastic
radar
introduces
gan
Minimum Conductor Size for Equipment Operating at Less than 50V
2015-06-22 15:47:00| Electrical Construction & Maintenance
Conductors for an appliance circuit supplying more than one appliance or appliance receptacle in an installation operating at less than 50V shall not be smaller than _____ AWG copper or equivalent. read more
Tags: than
size
equipment
minimum
Cree Releases Industry's Highest Power 50V GaN HEMT (320W)
2014-12-12 04:08:12| rfglobalnet Home Page
Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has extended its family of 50V discrete GaN high electron mobility transistor (HEMT) die with the release of three new components: a 20W, 6GHz die; a 75W, 6GHz die; and a 320W, 4GHz die.
Tags: power
highest
releases
cree