The TGF2952 is a 7W discrete GaN on SiC HEMT with an operating frequency in the DC – 14 GHz range, has a saturated output power of 38.4 dBm, and power gain of 20.4 dB at 3 GHz. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of high efficiency applications including military and civilian radar, radio communications, and test instrumentation.