Offered in 1 W and 2 W models, Broadband RF Amplifiers utilize hybrid microwave integrated circuit and advanced GaAs pHEMT technology. Connectorized SMA modules are unconditionally stable and include built-in voltage regulation, bias sequencing, and reverse bias protection. Featuring hermetically sealed design, amplifiers operate from -55 to +85°C with gain from 32–48 dB, gain flatness from ±1 dB to ±2 dB at 12–18 GHz range, and linearity levels from 39–42 dBm.
This story is related to the following:Wideband Amplifiers | RF Amplifiers | Broadband Amplifiers |