Based on GaAs PHEMPT semiconductor technology with 50 Ω hybrid MIC circuits enclosed in environmentally sealed metal packages, RF Broadband Amplifiers offer noise figures from 2.5–6 dB across entire frequency range. Devices have gain levels from 20–48 dB, gain flatness as low as ±0.5 dB, and power output from 20 mW to 2 W. Equipped with stainless steel SMA or 2.92 mm connectors, amplifiers feature DC voltage supply from +8.5 to +15 Vdc and bias current from 125–2,500 mA.