Housed in 66-pin TSOP II package, Models AS4C4M16D1, AS4C8M16D1, AS4C16M16D1, and AS4C32M16D1 offer densities of 64, 128, 256, and 512 Mb, respectively. Devices feature clock rate of 200 MHz, commercial temperature range of 0–70°C, and programmable read or write burst lengths of 2, 4, or 8. Auto pre-charge function provides self-timed row pre-charge initiated at end of burst sequence. Internally configured as 4 banks of 1M, 2M, 4M, or 8M word x 16 bits, SDRAMs operate from +2.5 V power supply.
This story is related to the following:Dynamic Random Access Memories (DRAM)