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FRAM and nvSRAM protect critical data during power failure.

2016-01-25 14:31:05| Industrial Newsroom - All News for Today

Ferroelectric-RAM (F-RAM™), energy-efficient NVRAM (nonvolatile random access memory) technology, offers 100 trillion write cycle endurance. Ferroelectric material resists data corruption caused by radiation or magnetic field exposure. Providing data retention without additional batteries, nonvolatile static RAM (nvSRAM) offers access times as low as 20 nsec and unlimited endurance and uses charge stored on external capacitor. Densities range from 256 Kb to 4Mb (F-RAM) and 1–16 Mb (nvSRAM).

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Category:Industrial Goods and Services

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