Offered in 45, 70, and 95 A current ratings, 650 V non-punch through (NPT) insulated bipolar gate transistors (IGBTs) enable switching speeds up to 150 kHz – further improved when transistors are paired with SiC free-wheeling diodes. Products are based on advanced Power MOS 8™ technology and leverage wafer thinning process, reducing total switching losses, and may be paralleled (positive temperature coefficient of Vcesat) to improve reliability in high-current modules.
This story is related to the following:High Current Transistors |