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Fujitsu Develops GaN Power Amplifier With World's Highest Output Performance For W-Band Wireless Transmissions

2016-01-26 04:54:42| rfglobalnet News Articles

Fujitsu Limited and Fujitsu Laboratories Ltd. (collectively "Fujitsu") recently announced the development of a gallium-nitride (GaN) high-electron mobility transistor (HEMT) power amplifier for use in W-band (75-110 GHz) transmissions. This can be used in a high-capacity wireless network with coverage over a radius of several kilometers.

Tags: power performance highest wireless

Category:Telecommunications

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