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Fujitsu Develops High-Output Mm-Wave Transceiver Based On GaN HEMT
2013-06-25 08:44:09| rfglobalnet News Articles
Fujitsu Laboratories of Kawasaki, Japan has developed compact gallium nitride high-electron-mobility transistor (HEMT)-based transceiver module technology with an output of 10W operating at frequencies up to the millimeter-wave band.
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Category:Telecommunications
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