Low-profile, 600 V GaN-based HEMTs (high electron mobility transistors) utilize EZ-GaN™ technology. Supplied in PQFN88 packages, TPH3002LD and TPH3002LS feature 290 mΩ RDS(on), 29 nC Qrr, and low inductance for high-frequency switching capability. They also feature kelvin connection to isolate gate circuit from high-current output circuit and reduce EMI. Supplied in TO220 package, TPH3002PD/TPH3002PS suit smaller, lower power applications such as adapters and all-in-one computer power supplies.
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