je.st
news
Tag: hemts
Plastic GaN HEMTs support LTE and radar applications.
2015-10-19 14:31:07| Industrial Newsroom - All News for Today
Supplied in 4.5 x 6.5 mm plastic SMT packages, Models CGHV27060MP and CGHV35060MP are 50 V/60 W broadband GaN HEMTs fabricated on SiC substrate with 0.4 µm process. Model CGHV27060MP, supporting frequencies from UHF through 2.7 GHz, provides 16.5 dB gain, 70% drain efficiency, and 80 W output power at pulsed PSAT with 100 µs pulse width and 10% duty cycle. Model CGHV35060MP operates from 2.7–3.5 GHz. Tested at 3.3 GHz, device exhibits 14.5 dB gain with 67% drain efficiency.
Tags: support
applications
plastic
radar
Wolfspeed Introduces 50V Plastic GaN HEMTs For LTE & Radar
2015-10-13 06:32:02| rfglobalnet Home Page
Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has introduced two new plastic-packaged 50V/60W GaN HEMT devices that provide the intrinsic GaN value of power and bandwidth in a low cost package platform.
Tags: plastic
radar
introduces
gan
Wolfspeed, A Cree Company, to Promote Proven, Reliable GaN HEMTs at EuMW 2015
2015-09-14 12:31:15| Industrial Newsroom - All News for Today
Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), is exhibiting at European Microwave Week (EuMW) 2015, which will take place September 611, 2015 in Paris. Exhibiting at Booth #240, Chris Harris...
Tags: company
promote
reliable
proven
Broadband GaN HEMTs suit applications to 4 GHz.
2015-04-22 14:31:06| Industrial Newsroom - All News for Today
Available in 2-leaded flange and pill packages, Model CGHV40050 operates from 50 V rail and delivers 50 W typ output power up to 4 GHz. Device provides 17.5 dB small signal gain at 1.8 GHz and 55% efficiency at PSAT. Rated for operating junction temperature of 225°C and case operating temperature spanning -40 to +80°C, transistor is suited for RF and microwave applications, including narrow band UHF applications, L- and S-Band applications, and multi-octave bandwidth amplifiers.
Tags: applications
suit
ghz
broadband
Agilent Technologies Announces Advanced Modeling Solutions For Nanoscale 3D FinFETs And High-Frequency/High-Power GaN HEMTs
2014-06-20 12:52:06| rfglobalnet Home Page
Agilent Technologies Inc. recently announced several innovations for the 2014 release of its industry-leading suite of device modeling and characterization software tools. The suite comprises Agilent EEsof EDA'sIntegrated Circuits Characterization and Analysis Program (IC-CAP),Model Builder Program (MBP),andModel Quality Assurance (MQA).
Tags: advanced
solutions
technologies
modeling