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N- and P-Channel MOSFETs feature on-resistance below 100 mohm.

2013-11-13 14:32:34| Industrial Newsroom - All News for Today

Suited for space-constrained handheld applications, N- and P-channel FemtoFET™ MOSFETs come in 0.6 x 1.0 x 0.35 mm LGA package and offer ESD protection >4,000 V human body model. Continuous drain current values are available from 1.5–3.1 A (N-channel) and -2.5 to -1.6 (P-channel). Typ rdson ranges are 130-370 mΩ (1.8 V), 110-240 mΩ (2.5 V), and 90-200 mΩ (4.5 V) for N-channel MOSFETs and 395-580 mΩ (1.8 V), 145-338 mΩ (2.5 V), and 90-210 mΩ (4.5 V) for P-channel MOSFETs. This story is related to the following:MOSFETs

Tags: feature mosfets pchannel onresistance

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