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Vishay Intertechnology's Si8851EDB P-Channel Gen III MOSFET Honored With 2013 EEPW Power ...
2014-05-30 06:00:00| Industrial Newsroom - All News for Today
MALVERN, Pa. — Vishay Intertechnology, Inc. (NYSE: VSH) today announced that the company's Si8851EDB TrenchFET® p-channel Gen III power MOSFET has received a 2013 Power Supply Products Award from Electronic Engineering & Product World magazine (EEPW), one of China's leading electronics industry publications.<br /> <br /> The annual EEPW Power Supply Products Award program — now in its 11th year — is open to embedded systems suppliers worldwide. Winners of Best Product and ...This story is related to the following:MOSFETs |
P-Channel Power MOSFET offers low RDS(ON) values.
2014-05-01 14:30:19| Industrial Newsroom - All News for Today
Supplied in 2 x 2 mm PowerPAK® SC-70 package, SiA453EDJ p-channel TrenchFET® power MOSFET conserves space and increases power efficiency in portable electronics. RoHS-compliant and halogen-free product, 100% Rg and UIS tested, offers on-resistance of 18.5 mΩ (-10 V), 23.5 mΩ (-4.5 V), 26.0 mΩ (-3.7 V), and 37.7 mΩ (-2.5 V) as well as 4,000 V built-in ESD protection. While -30 V VDS provides headroom needed for over-voltage spikes, 12 V VGS enables on-resistance ratings of -3.7 and -2.5 V.<br /> This story is related to the following:MOSFETs
P-Channel MOSFET increases efficiency in mobile computing devices.
2014-01-09 14:30:33| Industrial Newsroom - All News for Today
Supplied in 6.15 x 5.15 mm PowerPAK® SO-8 package, -20 V Si7157DP TrenchFET® p-channel Gen III power MOSFET offers respective on-resistance of 0.0016 and 0.0020 Ω at -10 and -4.5 V. On-resistance values enable designers to achieve lower voltage drops and conduction losses in circuits, promoting efficient use of power and consequently extending battery run times. RoHS-compliant product is optimized for load and battery switches in power management applications for notebook computers. This story is related to the following:MOSFETs
Tags: mobile
devices
increases
efficiency
Vishay Intertechnology's Si7655DN -20 V P-Channel MOSFET Wins EDN China 2013 Innovation Award
2013-12-16 06:00:00| Industrial Newsroom - All News for Today
MALVERN, Pa. — Vishay Intertechnology, Inc. (NYSE: VSH) today announced that its Si7655DN -20 V p-channel Gen III power MOSFET has won an EDN China 2013 Innovation Award. Presented at an award ceremony on Nov. 12 in Shanghai, the Si7655DN received a Best Product Award in the Power Devices and Modules category.<br /> <br /> The EDN China Innovation Awards were introduced in 2005 to recognize achievements in the design of ICs and related products in the Chinese market. This year, 144 ...This story is related to the following:MOSFETs |
Tags: china
award
innovation
wins
P-Channel Gen III Power MOSFET measures 2.4 x 2.0 x 0.4 mm.
2013-12-05 14:30:05| Industrial Newsroom - All News for Today
Supplied in 30-pin CSP MICRO FOOT® package with 0.4 mm profile, Si8851EDB increases efficiency while conserving space in mobile computing devices. This -20 V TrenchFET® p-channel Gen III power MOSFET offers on-resistance of 8.0 and 11.0 mΩ at respective gate drive of -4.5 and -2.5 V. Optimized for load and battery switches in power management applications for tablets, smartphones, and notebooks, halogen-free and RoHS-compliant device also provides 6 kV typ ESD protection. This story is related to the following:MOSFETs