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P-Channel MOSFET increases efficiency in mobile computing devices.

2014-01-09 14:30:33| Industrial Newsroom - All News for Today

Supplied in 6.15 x 5.15 mm PowerPAK® SO-8 package, -20 V Si7157DP TrenchFET® p-channel Gen III power MOSFET offers respective on-resistance of 0.0016 and 0.0020 Ω at -10 and -4.5 V. On-resistance values enable designers to achieve lower voltage drops and conduction losses in circuits, promoting efficient use of power and consequently extending battery run times. RoHS-compliant product is optimized for load and battery switches in power management applications for notebook computers. This story is related to the following:MOSFETs

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