Withstanding harsh environments up to 150°C, HAL 1002 has 8 kV ESD rating and integrated non-volatile memory (redundant EEPROM cells) that allows customization via programming of switching thresholds, sensor type, output behavior, and south or north pole sensitivity as well as several temperature coefficients. End-user can program switching thresholds Bon and Boff independently from each other in magnetic range of ±150 mT and in steps of <0.5% with max threshold precision of ±0.1%.
This story is related to the following:Hall-Effect Switches