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RF Transistor: 2729GN-500V
2013-05-07 16:39:09| rfglobalnet Products
Microsemi’s 2729GN-500V RF transistor is based on GaN on SiC technologies and targeted at high-power air traffic control airport surveillance radar applications. The 2729GN-500V delivers unparalleled performance of 500W of peak power with 12 dB of power gain and 53% drain efficiency over band 2.7 to 2.9 GHz band.
Tags: transistor
Category:Telecommunications
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