Samsung on Tuesday announced production of its first ultra-high-speed, 4Gb low-power mobile DRAM chip, which uses the company's most compact circuitry to date. The new double data rate 3 (LPDDR3) mobile DRAM, which is produced using a 20-nanometer manufacturing process, can transmit data at up to 2.1Gbps per pin. The new DRAM performance is more than double that of the preceding memory standard mobile DRAM (LPDDR2), which had a data transmission rate of up to 800Mbps.