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Simulation-Based Methodology For broadband GaN Power Amplifier Design
2016-04-26 11:04:25| rfglobalnet Downloads
This application note presents a simulation-based flow methodology in designing broadband GaN power amplifiers. This method uses load-line, load-pull, and real-frequency synthesis techniques for the design of a Class F amplifier using the Qorvo 30 W GaN high electron mobility transistor (HEMT). The Modelithics GaN HEMT nonlinear model for the Qorvo transistor in conjunction with NI AWR Design Environment™ design software, designers were able to reach the goals of a minimum output power of 25 W, bandwidth of 1.8 – 2.2 GHz, and a maximum power-added efficiency (PAE).
Tags: design
power
methodology
broadband
Category:Telecommunications