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Home › TI Reveals Industry's First 80-V Half-bridge GaN FET Module

 

TI Reveals Industry's First 80-V Half-bridge GaN FET Module

2015-03-24 11:31:14| Industrial Newsroom - All News for Today

Fully integrated GaN FET power-stage prototype enables power designers to quickly realize the true benefits of GaN DALLAS -- Texas Instruments (TI) (NASDAQ: TXN) today introduced the industry's first 80-V, 10-A integrated gallium nitride (GaN) field-effect transistor (FET) power-stage prototype, which consists of a...

Tags: module reveals gan fet

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