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Toshiba Expands High Power C-Band GaN HEMT Product Line to Support the SATCOM Market

2013-06-04 06:00:00| Industrial Newsroom - All News for Today

Optimized for High Power, Gain and Efficiency to Support Extended C-Band Applications<br /> <br /> SEATTLE - 2013 INTERNATIONAL MICROWAVE SYMPOSIUM, Booth #2027 - Toshiba America Electronic Components, Inc. (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, and its parent company, Toshiba Corp., today announced the expansion of its gallium nitride high electron mobility transistor (GaN HEMT) lineup with the addition of three new devices ...This story is related to the following:Telecommunications Integrated Circuits |

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