Home Vishay Intertechnology's Si8851EDB P-Channel Gen III MOSFET Honored With 2013 EEPW Power ...
 

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Vishay Intertechnology's Si8851EDB P-Channel Gen III MOSFET Honored With 2013 EEPW Power ...

2014-05-30 06:00:00| Industrial Newsroom - All News for Today

MALVERN, Pa. &mdash; Vishay Intertechnology, Inc. (NYSE: VSH) today announced that the company's Si8851EDB TrenchFET® p-channel Gen III power MOSFET has received a 2013 Power Supply Products Award from Electronic Engineering & Product World magazine (EEPW), one of China's leading electronics industry publications.<br /> <br /> The annual EEPW Power Supply Products Award program &mdash; now in its 11th year &mdash; is open to embedded systems suppliers worldwide. Winners of Best Product and ...This story is related to the following:MOSFETs |

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