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Low-Noise Amplifier Front-End Module With GPS/GNSS/BDS Pre- And Post-Filters: SKY65903-11 Datasheet

2016-05-17 15:40:15| rfglobalnet Home Page

The SKY65903-11 is a front-end module (FEM) with an integrated low-noise amplifier (LNA) and pre- and post-filters that are ideal for GPS/GNSS/BDS receiver applications. It provides high linearity, excellent gain, and a low noise figure.

Tags: pre module amplifier datasheet

 

Low-Noise Amplifier Front-End Module With GPS/GNSS/BDS Pre- And Post-Filters: SKY65903-11 Datasheet

2016-05-17 15:40:15| wirelessdesignonline Downloads

The SKY65903-11 is a front-end module (FEM) with an integrated low-noise amplifier (LNA) and pre- and post-filters that are ideal for GPS/GNSS/BDS receiver applications. It provides high linearity, excellent gain, and a low noise figure.

Tags: pre module amplifier datasheet

 
 

Ka-Band Silicon Transceiver Quad Core IC: AWMF-0108 Datasheet

2016-05-16 16:47:59| rfglobalnet Downloads

The AWMF-0108 is a highly integrated silicon quad core chip that is designed specifically for 5G phased array applications. features all requisite beam steering controls for 5 bit phase and gain control, 26 dB gain and +9 dBm output power during transmit mode and 31 dB coherent gain, 4.0 dB NF, and -23 dBm IIP3 during receive mode. This device has ESD protection on all pins, and is housed in a 48 lead 6x6 mm PQFN for easy installation in planar phased array antennas.

Tags: core silicon quad datasheet

 

220 Watt Asymmetric Doherty Power Transistor: QPD2730 Datasheet

2016-05-16 15:41:34| rfglobalnet Home Page

The QPD2730 is a 220 Watt asymmetric Doherty power transistor composed of pre-matched, discrete GaN on SiC HEMTs. With an operational frequency range of 2.575 to 2.635 GHz, this transistor is ideal for W-CDMA/LTE, macrocell base station, active antenna, and asymmetric Doherty applications.

Tags: power watt asymmetric transistor

 

100 W GaN X-Band Power Amplifier: TGM2635-CP Datasheet

2016-05-16 15:39:22| rfglobalnet Home Page

The TGM2635-CP 100W GaN is an X-band, high power MMIC amplifier fabricated on Qorvo’s GaN on SiC Process. Its package is a 10-lead bolt-down with a cure Cu base for superior thermal management. Both RF ports allow for simple system integration, making the amplifier ideally suited for both military and commercial x-band radar systems and data links.

Tags: power amplifier gan datasheet

 

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