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Reject Adjacent Interfering Signals In Agile Signal Environments: EB001 Datasheet
2016-05-03 15:38:49| rfglobalnet Home Page
This bandpass filter has been designed for tuned super-heterodyne receivers that contain analog or digital signal data in tactical communications applications.
Tags: signal
adjacent
environments
signals
Ultra-Low Phase Noise Oven Controlled Crystal Oscillator: OX-209 Datasheet
2016-05-02 13:33:38| rfglobalnet Downloads
The OX-209 is an ultra-low noise oven controlled crystal oscillator (OCXO) designed to operate within the 20 – 35 MHz frequency range. It is ideal for applications demanding extremely low noise sources including the reference oscillator for a phase–locked loop in the microwave spectrum.
Tags: phase
controlled
crystal
noise
DC 4 GHz GaN RF Transistors: QDP1010 Datasheet
2016-04-28 10:03:06| wirelessdesignonline Downloads
The QDP1010 is a discrete GaN on SiC HEMTs operating from the DC to 4 GHz frequency range. It is a 10W, 50V device with an output power level of 11W at 2 GHz, and a linear gain of 24.7 dB at 2 GHz. This transistor is ideal for wideband or narrowband amplifiers, jammers, and military radar, civilian radar, land mobile, military radio, and test instrumentation applications.
Tags: ghz
gan
datasheet
transistors
DC 4 GHz GaN RF Transistors: QDP1010 Datasheet
2016-04-28 10:03:06| rfglobalnet Downloads
The QDP1010 is a discrete GaN on SiC HEMTs operating from the DC to 4 GHz frequency range. It is a 10W, 50V device with an output power level of 11W at 2 GHz, and a linear gain of 24.7 dB at 2 GHz. This transistor is ideal for wideband or narrowband amplifiers, jammers, and military radar, civilian radar, land mobile, military radio, and test instrumentation applications.
Tags: ghz
gan
datasheet
transistors
DC 4 GHz GaN RF Transistors: QPD1009 Datasheet
2016-04-28 10:01:05| wirelessdesignonline Downloads
The QDP1009 is a discrete GaN on SiC HEMTs operating from the DC to 4 GHz frequency range. It is a 15W, 50V device with an output power level of 17W at 2 GHz, and a linear gain of 24 dB at 2 GHz. This transistor is ideal for wideband or narrowband amplifiers, jammers, and military radar, civilian radar, land mobile, military radio, and test instrumentation applications.
Tags: ghz
gan
datasheet
transistors
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