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Researchers create photonic transistors, a potential path for the continuation of Moores law

2013-07-09 17:06:34| Extremetech

A team from the University of Vienna has demonstrated a new transistor design that can switch on and off by varying the polarity of terahertz radiation with an input voltage of less than one volt.

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Diodes Incorporated Improves Power Density With Integrated High-Voltage Regulator Transistors

2013-06-13 12:00:00| electronicsweb News Articles

Diodes Incorporated, a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic and analog semiconductor markets, recently announced the monolithic integration of a transistor, Zener diode and resistor into a standard SOT89 package

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Power Transistors scale to peak pulse power level of 100 W.

2013-05-24 14:36:19| Industrial Newsroom - All News for Today

Housed in 3 x 6 mm DFN or 2.5 x 4.5 mm SOT-89 package, GaN in Plastic Transistors operate at 50 V drain bias and leverage sophisticated thermal management techniques for reliability in surface mount applications. Units are available in 90, 50, and 15 W models that can be mounted on PCBs via ground/thermal arrays. Featuring internal stress buffers that allow operation up to 200°C channel temperature, transistors are suited for ultra compact military and civilian radar systems.   This story is related to the following:Gallium Nitride (GaN) Transistors |

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Insulated Gate Bipolar Transistors offer high-speed switching.

2013-05-23 14:29:01| Industrial Newsroom - All News for Today

Available in 1,200 and 1,350 V versions with current ratings of 20, 30, and 40 A, Field Stop II NGTBxxN120IHRWG and NGTBxxN135IHRW are suitable for induction heating and soft switching applications operating at medium frequencies of 15–30 kHz. Models NGTBxxN120FL2WG and NGTBxxN135FL2WG, featuring operational junction temperature range of -55 to +175°C and current ratings up to 100 A, are designed specifically for solar inverter, UPS, and inverter welder applications. This story is related to the following:Switching Transistors |

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05.09.13 -- First Transistors Using GaN-On-Diamond Wafers Produced

2013-05-08 13:22:04| rfglobalnet News Articles

05/09/13 RF Globalnet Newsletter

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