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NXP Gives Head Start To RF Designers With Gen9 LDMOS RF Power Transistors

2014-06-05 09:58:45| rfglobalnet Home Page

NXP Semiconductors N.V. recently announced the launch of its ninth generation (Gen9) LDMOS RF power transistors for wireless/cellular base stations.

Tags: start power head designers

 

Normally-Off 100V GaN Transistors come in low-inductance package.

2014-05-30 14:31:06| Industrial Newsroom - All News for Today

Respectively, normally off 100 V GaN transistors GS61002P, GS61004P, GS61006P, and GS61008P are 20 A/21 mΩ, 40 A/11 mΩ, 60 A/8 mΩ, and 80 A/5 mΩ parts. Half bridge device, GS71008P (80 A/5 mΩ), is also available. Enhancement mode parts feature reverse current capability, source-sense for optimal high speed design, and minimal Total Gate Charge and Reverse Recovery Charge. RoHS-compliant, near chipscale, embedded GaNPX package minimizes inductance and optimizes thermal performance. This story is related to the following:Gallium Nitride (GaN) Transistors |

Tags: package gan transistors 100v

 
 

Normally-Off 650 V GaN Transistors aid high-speed system design.

2014-05-30 14:31:06| Industrial Newsroom - All News for Today

Normally-off 650 V GaN transistors GS66502P, GS66504P, GS66506P, and GS66508P are, respectively, 8.5 A/165 mΩ, 17 A/82 mΩ, 25 A/55 mΩ, and 34 A/41 mΩ parts. Also available, GS43106L is 30 A/60 mΩ cascode. Reverse current capability, zero reverse recovery charge, and source-sense optimize high-speed design. These RoHS-compliant devices come in near chipscale, embedded GaNPX package that optimizes thermal performance as well as eliminates wire bonds and thereby minimizes inductance. This story is related to the following:Gallium Nitride (GaN) Transistors |

Tags: system design aid gan

 

Cree Introduces New Low Cost, High Power GaN RF Transistors To Enable Higher Data Rate Telecom Systems

2014-05-30 12:47:48| rfglobalnet Home Page

Cree, Inc. introduces a new family of high power GaN RF transistors based on an innovative plastic package design, which leverages the superior RF performance of GaN in a low-cost platform.

Tags: high data power low

 

Cree Introduces New Low Cost, High Power GaN RF Transistors To Enable Higher Data Rate Telecom Systems

2014-05-30 12:47:48| electronicsweb Home Page

Cree, Inc. introduces a new family of high power GaN RF transistors based on an innovative plastic package design, which leverages the superior RF performance of GaN in a low-cost platform.

Tags: high data power low

 

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