je.st
news
Tag: transistors
NXP Gives Head Start To RF Designers With Gen9 LDMOS RF Power Transistors
2014-06-05 09:58:45| rfglobalnet Home Page
NXP Semiconductors N.V. recently announced the launch of its ninth generation (Gen9) LDMOS RF power transistors for wireless/cellular base stations.
Tags: start
power
head
designers
Normally-Off 100V GaN Transistors come in low-inductance package.
2014-05-30 14:31:06| Industrial Newsroom - All News for Today
Respectively, normally off 100 V GaN transistors GS61002P, GS61004P, GS61006P, and GS61008P are 20 A/21 mΩ, 40 A/11 mΩ, 60 A/8 mΩ, and 80 A/5 mΩ parts. Half bridge device, GS71008P (80 A/5 mΩ), is also available. Enhancement mode parts feature reverse current capability, source-sense for optimal high speed design, and minimal Total Gate Charge and Reverse Recovery Charge. RoHS-compliant, near chipscale, embedded GaNPX package minimizes inductance and optimizes thermal performance. This story is related to the following:Gallium Nitride (GaN) Transistors |
Tags: package
gan
transistors
100v
Normally-Off 650 V GaN Transistors aid high-speed system design.
2014-05-30 14:31:06| Industrial Newsroom - All News for Today
Normally-off 650 V GaN transistors GS66502P, GS66504P, GS66506P, and GS66508P are, respectively, 8.5 A/165 mΩ, 17 A/82 mΩ, 25 A/55 mΩ, and 34 A/41 mΩ parts. Also available, GS43106L is 30 A/60 mΩ cascode. Reverse current capability, zero reverse recovery charge, and source-sense optimize high-speed design. These RoHS-compliant devices come in near chipscale, embedded GaNPX package that optimizes thermal performance as well as eliminates wire bonds and thereby minimizes inductance. This story is related to the following:Gallium Nitride (GaN) Transistors |
Cree Introduces New Low Cost, High Power GaN RF Transistors To Enable Higher Data Rate Telecom Systems
2014-05-30 12:47:48| rfglobalnet Home Page
Cree, Inc. introduces a new family of high power GaN RF transistors based on an innovative plastic package design, which leverages the superior RF performance of GaN in a low-cost platform.
Cree Introduces New Low Cost, High Power GaN RF Transistors To Enable Higher Data Rate Telecom Systems
2014-05-30 12:47:48| electronicsweb Home Page
Cree, Inc. introduces a new family of high power GaN RF transistors based on an innovative plastic package design, which leverages the superior RF performance of GaN in a low-cost platform.
Sites : [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] [18] [19] [20] [21] [22] next »