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IEEE Power Electronics Society (PELS) Webinar, 'GaN Transistors Crushing Silicon In Wireless Energy Transfer'

2014-05-23 07:51:04| electronicsweb Home Page

Efficient Power Conversion Corporation (EPC) experts on the design and use of gallium nitride transistors will conduct a one-hour webinar sponsored by the IEEE Power Electronics Society (PELS) on June 4th from 10:30 AM to 11:30 AM (EDT). In this webinar eGaN FETs are compared with MOSFETs in highly resonant wireless energy transfer using class-E, and a novel high efficiency voltage-mode class-D topology

Tags: power society electronics energy

 

Efficient Power Conversion (EPC) Introduces Plug And Play 97% Efficient Half-Bridge Converter DrGaNPLUS Evaluation Board Featuring Gallium Nitride Transistors

2014-05-23 07:40:32| electronicsweb Home Page

Providing an easy-to-use way for power systems designers to evaluate the exceptional performance of gallium nitride transistors, Efficient Power Conversion Corporation (EPC) introduces DrGaNPLUSevaluation boards

Tags: board power play evaluation

 
 

05.22.14 -- Nanowire-Bridging Transistors Open Way To Next-Generation Electronics

2014-05-21 12:47:48| wirelessdesignonline News Articles

05/22/14Wireless Design Online Newsletter

Tags: open electronics transistors nextgeneration

 

Cree Introduces Highest Power And Frequency Plastic Packaged GaN Transistors For Low Cost Radar And Datalinks

2014-05-16 13:01:18| rfglobalnet Home Page

Cree, Inc. introduces the industry’s highest power continuous wave (CW) GaN HEMT RF transistors packaged in a dual-flat no-leads (DFN) format. Aimed at the cost-sensitive sub-100W commercial radar and data link amplifier market segments, the new 6- and 25-watt DFN transistors effectively obsolete the use of inefficient GaAs transistors in C- and X-Band frequencies and also enable the practical replacement of short life tube-based technology for commercial radar applications such as weather, marine and surveillance.

Tags: power low cost highest

 

Cree Introduces Highest Power And Frequency Plastic Packaged GaN Transistors For Low Cost Radar And Datalinks

2014-05-16 13:01:18| electronicsweb Home Page

Cree, Inc. introduces the industry’s highest power continuous wave (CW) GaN HEMT RF transistors packaged in a dual-flat no-leads (DFN) format

Tags: power low cost highest

 

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