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90W Discrete Power Transistor: TGF2023-2-20 Datasheet

2015-09-01 18:08:34| rfglobalnet Downloads

The TGF2023-2-20 is a 90W discrete GaN on SiC HEMT with an operating frequency in the DC – 18 GHz range, and an operating voltage of Dec-32V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

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50W Discrete Power Transistor: TGF2023-2-10 Datasheet

2015-09-01 17:55:39| rfglobalnet Home Page

The TGF2023-2-10 is a 50W discrete GaN on SiC HEMT with an operating frequency in the DC – 18 GHz range, and an operating voltage of Dec-32V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

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25W Discrete Power Transistor: TGF2023-2-05 Datasheet

2015-09-01 17:46:16| rfglobalnet Home Page

The TGF2023-2-05 is a 25W discrete GaN on SiC HEMT with an operating frequency in the DC – 18 GHz range, and an operating voltage of Dec-32V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

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12W Discrete Power Transistor: TGF2023-2-02 Datasheet

2015-09-01 17:36:58| rfglobalnet Home Page

The TGF2023-2-02 is a 12W discrete GaN on SiC HEMT with an operating frequency in the DC – 18 GHz range, and an operating voltage of Dec-32V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

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6W Discrete Power Transistor: TGF2023-2-01 Datasheet

2015-07-29 15:54:19| rfglobalnet Downloads

The TGF2023-2-01 is a 6W discrete GaN on SiC HEMT with an operating frequency in the DC – 18 GHz range, and an operating voltage of Dec-32V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

Tags: power discrete transistor datasheet

 

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